MFG:International Rectifier Category:Discrete Semiconductor Products
Category: Discrete Semiconductor Products
MFG: International Rectifier
Descriptions: MOSFET N-CH 100V 9.7A D2PAK
| Technical/Catalog Information | IRF520NSTRR |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 9.7A |
| Rds On (Max) @ Id, Vgs | 200 mOhm @ 5.7A, 10V |
| Input Capacitance (Ciss) @ Vds | 330pF @ 25V |
| Power - Max | 3.8W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 25nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRF520NSTRR IRF520NSTRR |
IRF034
PDF/DataSheet Download
MOSFET N-CH 100V 9.7A D2PAK
MOSFET N-CH 100V 9.7A D2PAK
MOSFET N-CH 100V 9.7A D2PAK
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRF520NPbF, combined with the fast switching speed and ruggedized device design that HEXFET ...
The IRF520NSPbF and IRF520NLPbF has 6 features.The first one is advanced process technology.The second one is surface mount (IRF520NS).The third one is low-profit through-hole(IRF520NL).The fourth one is 175 operating temperature.The fifth one is fast switc...
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRF520N, combined with the fast switching speed and ruggedized device design that HEXFET Pow...
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