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MFG:TO-220AB  Package Cooled:7850  D/C:IR  

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Part Number: IRF520V

 

MFG: TO-220AB

Package Cooled: 7850

D/C: IR

Description: Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced proc...


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IRF520V General Description


Advanced HEXFET®  Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.  This benefit,combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. 

IRF520V Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 9.6 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 6.8
IDM Pulsed Drain Current 37
PD @TC = 25°C Power Dissipation 44 W
Linear Derating Factor 0.29 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 780 mJ
IAR Avalanche Current 9.2 A
EAR Repetitive Avalanche Energy 4.4 mJ
dv/dt Peak Diode Recovery dv/dt 7.0 V/ns
T J
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175 °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 lbf*in (1.1N*m)

IRF520V Features

· Advanced Process Technology
· Ultra Low On-Resistance
· Dynamic dv/dt Rating
· 175°C Operating Temperature
·  Fast Switching
·  Fully Avalanche Rated
· Optimized for SMPS Applications

IRF520V datasheet

IRF520V
PDF/DataSheet Download

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