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MFG:INTERNATIONALRECTIFIER  Package Cooled:DIP/SOP  D/C:08+  

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Part Number: IRF520VL

 

MFG: INTERNATIONALRECTIFIER

Package Cooled: DIP/SOP

D/C: 08+

Description: Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced proc...


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IRF520VL General Description


Advanced HEXFET®  Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2 Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D 2Pak is suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRF520VL) is available for low-profile applications.
 

IRF520VL Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V -40 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V -29
IDM Pulsed Drain Current -140
PD @TC = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ± 20 V
IAR Avalanche Current 9.2 A
EAR Repetitive Avalanche Energy 4.4 mJ
dv/dt Peak Diode Recovery dv/dt 7.0 V/ns
T J
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175 °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )

IRF520VL Features

· Advanced Process Technology
·Ultra Low On-Resistance
·Dynamic dv/dt Rating
·175°C Operating Temperature
·Fast Switching
·Fully Avalanche Rated
·Optimized for SMPS Applications

IRF520VL datasheet

IRF520VL
PDF/DataSheet Download

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