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Part Number: IRF520VPbF

 

 

 

 

Description: Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques...


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IRF520VPbF General Description


Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

IRF520VPbF Maximum Ratings

  Parameter
Max.
Units
ID @ TA = 25 Continuous Drain Current, VGS @ 10V
9.6
A
ID @ TA= 100 Continuous Drain Current, VGS @ 10V
6.8
IDM Pulsed Drain Current
37
PD @TC = 25 Power Dissipation
44
W
  Linear Derating Factor
0.29
W/
VGS Gate-to-Source Voltage
±20
V
IAR Avalanche Current
9.2
  
EAR Repetitive Avalanche Energy
4.4
  
dv/dt Peak Diode Recovery dv/dt 
7.0
V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 175
  Soldering Temperature, for 10 seconds
300 (1.6mm from case )
  Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)

IRF520VPbF Features

Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175Operating Temperature
Fast Switching
Fully Avalanche Rated
Optimized for SMPS Applications
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IRF520VPbF datasheet

IRF034
PDF/DataSheet Download

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