MOSFET P-CH 100V 40A TO-220AB
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| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ -10V | -40 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ -10V | -29 | |
| IDM | Pulsed Drain Current | -140 | |
| PD @TC = 25°C | Power Dissipation | 200 | W |
| Linear Derating Factor | 1.3 | W/°C | |
| VGS | Gate-to-Source Voltage | ± 20 | V |
| EAS | Single Pulse Avalanche Energy | 780 | mJ |
| IAR | Avalanche Current | -21 | A |
| EAR | Repetitive Avalanche Energy | 20 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | -5.0 | V/ns |
| T J TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
| Mounting torque, 6-32 or M3 screw | 10 lbf*in (1.1N*m) |
| Technical/Catalog Information | IRF5210 |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 40A |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 24A, 10V |
| Input Capacitance (Ciss) @ Vds | 2700pF @ 25V |
| Power - Max | 200W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 180nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRF5210 IRF5210 |