MFG:IR Package Cooled:TO-220 D/C:09+
MFG: IR
Package Cooled: TO-220
D/C: 09+
Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low&n...
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ -10V | -40 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ -10V | -29 | |
| IDM | Pulsed Drain Current | -140 | |
| PD @TC = 25°C | Power Dissipation | 200 | W |
| Linear Derating Factor | 1.3 | W/°C | |
| VGS | Gate-to-Source Voltage | ± 20 | V |
| EAS | Single Pulse Avalanche Energy | 780 | mJ |
| IAR | Avalanche Current | -21 | A |
| EAR | Repetitive Avalanche Energy | 20 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | -5.0 | V/ns |
| T J TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
| Mounting torque, 6-32 or M3 screw | 10 lbf*in (1.1N*m) |
IRF5210
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MOSFET N-CH 100V 9.6A D2PAK
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