IRF5210L

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Type: MOSFET P-Channel, Metal Oxide
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 40A
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 180nC @ 10V
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Input Capacitance (Ciss) @ Vds: 2700pF @ 25V
Manufacturer: International Rectifier
Power - Max: 3.8W
Supplier Device Package: TO-262
Rds On (Max) @ Id, Vgs: 60 mOhm @ 24A, 10V


Features:

·Advanced Process Technology
·Surface Mount (IRF5210S)
· Low-profile through-hole (IRF5210L)
· 175°C Operating Temperature
· Fast Switching
·P-Channel
· Fully Avalanche Rated




Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ -10V	-40	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ -10V	-29
IDM	Pulsed Drain Current	-140
PD @TC = 25°C	Power Dissipation	3.8	W
PD @TC = 25°C	Power Dissipation	200
	Linear Derating Factor	1.3	W/°C
VGS	Gate-to-Source Voltage	± 20	V
EAS	Single Pulse Avalanche Energy	780	mJ
IAR	Avalanche Current	-21	A
EAR	Repetitive Avalanche Energy	20	mJ
dv/dt	Peak Diode Recovery dv/dt	-5.0	V/ns
T J TSTG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRF5210L, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D² Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. IRF5210L provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D² Pak is suitable for high current applications because of iIRF5210L low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRF5210L) is available for low-profile applications.