Position: Home > Datasheet list > IRF Series > Index I > IRF5210L
Electronica China

Purchase IRF5210L, In-stock IRF5210L From SeekIC.

MFG:N/A  Package Cooled:NA/  D/C:09+  

IRF5210L Product Image

IRF Series Datasheet download

Five Points

Part Number: IRF5210L

 

MFG: N/A

Package Cooled: NA/

D/C: 09+

Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low o...


Urgent Purchase

IRF5210L General Description


Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2 Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest  power capability and the lowest possible on-resistance in any existing surface mount package. The D2 Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRF5210L) is available for low-profile applications.

IRF5210L Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -40 A
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -29
IDM Pulsed Drain Current -140
PD @TC = 25°C Power Dissipation 3.8 W
 PD @TC = 25°C  Power Dissipation  200  
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 780 mJ
IAR Avalanche Current -21 A
EAR Repetitive Avalanche Energy 20 mJ
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T J
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175 °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )

IRF5210L Features

·Advanced Process Technology
·Surface Mount (IRF5210S)
· Low-profile through-hole (IRF5210L)
· 175°C Operating Temperature
· Fast Switching
·P-Channel
· Fully Avalanche Rated

IRF5210L datasheet

IRF5210L
PDF/DataSheet Download

Find IRF5210L Suppliers

  • ·IRF034
  • IRF [International Rectifier] 
  • REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) 
  • 147521 KB
  • IRF034 Datasheet Download
  • ·IRF044
  • SEME-LAB [Seme LAB] 
  • N-CHANNEL POWER MOSFET 
  • 22513 KB
  • IRF044 Datasheet Download
  • ·IRF044SMD
  • SEME-LAB [Seme LAB] 
  • N-CHANNEL POWER MOSFET 
  • 21905 KB
  • IRF044SMD Datasheet Download
  • ·IRF054
  • IRF [International Rectifier] 
  • REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) 
  • 149688 KB
  • IRF054 Datasheet Download
  • ·IRF054SMD
  • SEME-LAB [Seme LAB] 
  • N-CHANNEL POWER MOSFET 
  • 23141 KB
  • IRF054SMD Datasheet Download
  • ·IRF100
  • ETC [ETC] 
  • 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED 
  • 86902 KB
  • IRF100 Datasheet Download
  • ·IRF101
  • FAIRCHILD [Fairchild Semiconductor] 
  • N-Channel Power MOSFETs, 27 A, 60-100V 
  • 149859 KB
  • IRF101 Datasheet Download
  • ·IRF1010E
  • IRF [International Rectifier] 
  • Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A 
  • 200209 KB
  • IRF1010E Datasheet Download

Related Part Number

IRF5210L Relative Products

  • IRF5210

    IRF5210

    Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRF5210,combined with the fast switching speed and ruggedized device design that HEXFET Powe...

  • IRF520VSTRRPBF

    IRF520VSTRRPBF

    MOSFET N-CH 100V 9.6A D2PAK

  • IRF520VSPbF

    IRF520VSPbF

    Advanced HEXFET® Power MOSFETs from International Rectifierutilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit of IRF520VSPbF, combined with the fast switching speed and ruggedized device design tha...

  • IRF520VS

    IRF520VS

    Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRF520VS, combined with the fast switching speed and ruggedized device design that...

  • IRF520VPbF

    IRF520VPbF

    Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRF520VPbF, combined with the fast switching speed and ruggedized device design th...

  • IRF520VL

    IRF520VL

    Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRF520VL, combined with the fast switching speed and ruggedized device design that...

Hotspot Suppliers Product

Product List

  • Models: AM7200-80JC Price: 0.75-0.83 USD

    AM7200-80JC

    Price: 0.75-0.83 USD

    PLCC32, Military/High-Rel N, Tech CMOS, Number of Words 256, Bits Per Word 9, CMOS FIFO

  • Models: 80MXC3300M30x35 Price: 1.04-1.25 USD

    80MXC3300M30x35

    Price: 1.04-1.25 USD

    80MXC3300M30X35 - LARGE CAN TYPE ALUMINUM ELECTROLYTIC CAPACITORS - RUBYCON CORPORATION

  • Models: FF600R06ME3 Price: 10-300 USD

    FF600R06ME3

    Price: 10-300 USD

    FF600R06ME3 IGBT Modules up to 600V / 650V dual - Infineon Technologies

  • Models: LM2575T-5.0 Price: 0.24-0.28 USD

    LM2575T-5.0

    Price: 0.24-0.28 USD

    simple switcher, 1A Step-Down, Voltage Regulator, Adjustable version output voltage range

  • Models: BFP640 Price: 0.13-0.15 USD

    BFP640

    Price: 0.13-0.15 USD

    NPN Silicon Germanium RF Transistor

  • Models: 54ACTQ244WRQM Price: 1-1 USD

    54ACTQ244WRQM

    Price: 1-1 USD

    Quiet Series Octal Buffer/Line Driver

  • Models: MM74HC373N Price: 0.1-2 USD

    MM74HC373N

    Price: 0.1-2 USD

    high speed, octal D-type latch, DIP, -0.5 to 7.0V, Low quiescent current, 80 μA

  • Models: EP3SL150F1152C2N Price: 400-450 USD

    EP3SL150F1152C2N

    Price: 400-450 USD

    FPGA, 150K, Selectable Core Voltage

  • Models: ENC-03RA Price: 2.5-3 USD

    ENC-03RA

    Price: 2.5-3 USD

    Piezoelectric Vibrating Gyroscopes ENC-03RA

  • Models: 2SA1797T100Q Price: 0.095-0.15 USD

    2SA1797T100Q

    Price: 0.095-0.15 USD

    power transistor, 50V, 3A, SOT-89, Low saturation voltage, Rohm

  • Models: MAX232CPE Price: 1-10 USD

    MAX232CPE

    Price: 1-10 USD

    IC 2DVR/2RCVR RS232 5V 16-DIP - MAX232CPE

  • Models: XP4313-(TX) Price: 0.01-0.04 USD

    XP4313-(TX)

    Price: 0.01-0.04 USD

    NPN epitaxial planar, 50 V, NPN

Map list:   ABCDEFGHIJKLMNOPQRSTUVWXYZ    0123456789All