IRF5305

Maximum Operating Temperature :
Mounting Style :
Packaging :
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Transistor Polarity : P-Channel
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 31 A
Resistance Drain-Source RDS (on) : 60 mOhms


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ -10V	-31	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ -10V	-22
IDM	Pulsed Drain Current	-110
PD @TC = 25°C	Power Dissipation	110	W
	Linear Derating Factor	0.71	W/°C
VGS	Gate-to-Source Voltage	± 20	V
EAS	Single Pulse Avalanche Energy (Thermally Limited)	280	mJ
EAS (tested)	Single Pulse Avalanche Energy Tested Value	11
IAR	Avalanche Current	-5.0 -55 to + 175	A
EAR	Repetitive Avalanche Energy		mJ
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 srew	10 lbf?in (1.1N?m)

Description

The IRF5305 is a HEXFET power MOSFET.Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Features of the IRF5305 are:(1)advanced process technology; (2)dynamic dv/dt rating; (3)175 operating temperature; (4)fast switching; (5)p-channel; (6)fully avalanche rated.The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

The absolute maximum ratings of the IRF5305 can be summarized as:(1)gate-to-source voltage:±20V;(2)storage temperature range:-55 to 175;(3)operating junction temperature range:-55 to 175;(4)pulsed drain current:-110A;(5)soldering temperature, for 10 seconds:300;(6)power dissipation:110 W.The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite).

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Parameters:

Technical/Catalog Information	IRF5305
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	31A
Rds On (Max) @ Id, Vgs	60 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds	1200pF @ 25V
Power - Max	3.8W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	63nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF5305 IRF5305