Purchase IRF5305S/L, In-stock IRF5305S/L From SeekIC.
Part Number: IRF5305S/L
Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev...
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IRF5305S/L
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DataSheet
General Description
IRF5305S/L General Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF5305L) is available for lowprofile applications.
IRF5305S/L Maximum Ratings
|
Parameter |
Max. |
Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @- 10V |
-31 |
A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ -10V |
-22 | |
| IDM | Pulsed Drain Current |
-110 | |
| PD @TA = 25°C | Power Dissipation |
3.8 |
W |
| PD @TC = 25°C | Power Dissipation |
110 |
W |
| Linear Derating Factor |
0.71 |
W/°C | |
| VGS | Gate-to-Source Voltage |
± 20 |
V |
| EAS | Single Pulse Avalanche Energy |
280 |
mJ |
| IAR | Avalanche Current |
-16 |
A |
| EAR | Repetitive Avalanche Energy |
11 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt |
-5.8 |
V/ns |
|
TJ |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
°C |
| Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
IRF034
PDF/DataSheet Download
- Datasheet: IRF034
- File Size: 147521 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
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