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IRF530A

MOSFET TO-220 N-Ch A-FET

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SeekIC No. : 00159579 Detail

IRF530A: MOSFET TO-220 N-Ch A-FET

IRF530A Data Sheet

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Part Number:
IRF530A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Continuous Drain Current : 14 A Resistance Drain-Source RDS (on) : 0.11 Ohms
Configuration : Single Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole Package / Case : TO-220AB
Packaging : Tube    

Description

Gate-Source Breakdown Voltage :
Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Resistance Drain-Source RDS (on) : 0.11 Ohms
Continuous Drain Current : 14 A


Features:

·Avalanche Rugged Technology
·Rugged Gate Oxide Technology
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
·175 Operating Temperature
·Lower Leakage Current : 10 A (Max.) @ VDS = 100V
·Lower RDS(ON) : 0.092 (Typ.)


Specifications

Symbol
Parameter
Value
Units
VDS
Drain-Source Voltage
100
V
ID
Continuous Drain Current (TC=25 )
14
A
Continuous Drain Current (TC=100 )
9.9
IDM
Drain Current-Pulsed
56
A
VGS
Gate-to-Source Voltage
+_ 20
V
EAS
Single Pulsed Avalanche Energy
261
mJ
IAR
Avalanche Current
14
A
EAR
Repetitive Avalanche Energy
5.5
mJ

dv/dt

Peak Diode Recovery dv/dt
6.5
V/ns
PD
Total Power Dissipation (TC=25 )
Linear Derating Factor
55
0.36
W
W/OC
TJ , TSTG
Operating Junction and
Storage Temperature Range
- 55 to +17
OC
TL
Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds
300



Parameters:

Technical/Catalog InformationIRF530A
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C14A
Rds On (Max) @ Id, Vgs110 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds 790pF @ 25V
Power - Max55W
PackagingTube
Gate Charge (Qg) @ Vgs36nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF530A
IRF530A



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