IRF530N

Features:

 Advanced Process Technology
 Ultra Low On-Resistance
Dynamic dv/dt Rating
 175°C Operating Temperature
  Fast Switching
  Fully Avalanche Rated


Specifications

	Parameter	Max.	Unit
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	17	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	12
IDM	Pulsed Drain Current	60
PD @TC = 25°C	Power Dissipation	70	W
	Linear Derating Factor	0.47	W/°C
VGS	Gate-to-Source Voltage	± 20	V
IAR	Avalanche Current	9.0	A
EAR	Repetitive Avalanche Energy	7.0	mJ
dv/dt	Peak Diode Recovery dv/dt	7.4	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 srew	10 lbf*in (1.1N*m)

Description

Advanced HEXFET^®  Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.  This benefit of IRF530N, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, IRF530N provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to IRF530N wide acceptance throughout the industry.


Parameters:

Technical/Catalog Information	IRF530N
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	17A
Rds On (Max) @ Id, Vgs	90 mOhm @ 9A, 10V
Input Capacitance (Ciss) @ Vds	1200pF @ 25V
Power - Max	70W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	37nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF530N IRF530N IRF530NIR ND IRF530NIRND IRF530NIR