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Part Number: IRF530N

 

 

 

 

Description: Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques...


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IRF530N General Description


Advanced HEXFET®  Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

IRF530N Maximum Ratings

Parameter Max. Unit
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 17 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12
IDM Pulsed Drain Current 60
PD @TC = 25°C Power Dissipation 70 W
Linear Derating Factor 0.47 W/°C
VGS Gate-to-Source Voltage ± 20 V
IAR Avalanche Current 9.0 A
EAR Repetitive Avalanche Energy 7.0 mJ
dv/dt Peak Diode Recovery dv/dt 7.4 V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175 °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf*in (1.1N*m)

IRF530N Features

 Advanced Process Technology
 Ultra Low On-Resistance
Dynamic dv/dt Rating
 175°C Operating Temperature
  Fast Switching
  Fully Avalanche Rated

IRF530N datasheet

IRF530N
PDF/DataSheet Download

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