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IRF530NLPbF

MOSFET N-CH 100V 17A TO-262

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SeekIC No. : 004376520 Detail

IRF530NLPbF: MOSFET N-CH 100V 17A TO-262

IRF530NLPbF Data Sheet

floor Price/Ceiling Price

US $ .36~.68 / Piece | Get Latest Price
Part Number:
IRF530NLPbF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~10
  • 10~100
  • 100~250
  • 250~500
  • 500~1000
  • 1000~2500
  • 2500~10000
  • Unit Price
  • $.68
  • $.49
  • $.46
  • $.44
  • $.41
  • $.39
  • $.36
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Product Details

Description



Features:

Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
 175 Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free


Specifications

Symbol
 Parameter
Max.
Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V
17
A
ID @ TC =100 Continuous Drain Current, VGS @ 10V
12
IDM Pulsed Drain Current
60
PD @TA= 25 Power Dissipation
3.8
W
PD @TC= 25 Power Dissipation
70
W
  Linear Derating Factor
0.47
W/
VGS Gate-to-Source Voltage
± 20
V
IAR Avalanche Current
9.0
A
EAR Repetitive Avalanche Energy
7.0
mJ
dv/dt Peak Diode Recovery dv/dt
7.4
V/ns
TJ
TSTG
 Operating Junction and
Storage Temperature Range
-55 to + 175
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )



Parameters:

Technical/Catalog InformationIRF530NLPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C17A
Rds On (Max) @ Id, Vgs90 mOhm @ 9A, 10V
Input Capacitance (Ciss) @ Vds 920pF @ 25V
Power - Max3.8W
PackagingTube
Gate Charge (Qg) @ Vgs37nC @ 10V
Package / CaseTO-262-3 (Straight Leads)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF530NLPBF
IRF530NLPBF



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