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MFG:IR  Package Cooled:TO-220  D/C:09+  

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Part Number: IRF530NPbF

 

MFG: IR

Package Cooled: TO-220

D/C: 09+

Description: Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced proce...


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IRF530NPbF General Description


Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.  This benefit,combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

IRF530NPbF Maximum Ratings
Parameter
Units
ID @ VGS=-12V,TC=25
 Continuous Drain Curren VGS @10V
17
A
ID @ VGS=-12V,TC=100
 Continuous Drain Curren VGS @10V
12
IDM
 Pulsed Drain Current
60
PD@ TC= 25
 CMax. Power Dissipatio
70
W
 Linear Derating Factor
0.47
W/
VGS
 Gate-to-Source Voltage
±20
V
IAR
 Avalanche Current
9.0
A
EAR
 Repetitive Avalanche Energy
7.0
mJ
dv/dt
 Peak Diode Recovery dv/dt
7.4
V/nS
TJ
TSTG
 Operating Junction
Storage Temperature Range
-55 to 175
Lead Temperature
300 (1.6mm from case )
 Weight
10 lbf.in (1.1N.m)
g

IRF530NPbF datasheet

IRF034
PDF/DataSheet Download

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