IRF530NPBF

MOSFET MOSFT 100V 17A 90mOhm 24.7nC

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IRF530NPBF: MOSFET MOSFT 100V 17A 90mOhm 24.7nC

floor Price/Ceiling Price

US $ .53~1.33 / Piece | Get Latest Price
Part Number:
IRF530NPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.33
  • $.81
  • $.56
  • $.53
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 17 A
Mounting Style : Through Hole Package / Case : TO-220AB
Packaging : Tube    

Description

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : 20 V
Continuous Drain Current : 17 A


Specifications

Parameter
Units
ID @ VGS=-12V,TC=25
Continuous Drain Curren VGS @10V
17
A
ID @ VGS=-12V,TC=100
Continuous Drain Curren VGS @10V
12
IDM
Pulsed Drain Current
60
PD@ TC= 25
CMax. Power Dissipatio
70
W
Linear Derating Factor
0.47
W/
VGS
Gate-to-Source Voltage
±20
V
IAR
Avalanche Current
9.0
A
EAR
Repetitive Avalanche Energy
7.0
mJ
dv/dt
Peak Diode Recovery dv/dt
7.4
V/nS
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to 175
Lead Temperature
300 (1.6mm from case )
Weight
10 lbf.in (1.1N.m)
g



Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.  This benefit of IRF530NPbF, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to IRF530NPbF wide acceptance throughout the industry.




Parameters:

Technical/Catalog InformationIRF530NPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C17A
Rds On (Max) @ Id, Vgs90 mOhm @ 9A, 10V
Input Capacitance (Ciss) @ Vds 920pF @ 25V
Power - Max70W
PackagingTube
Gate Charge (Qg) @ Vgs37nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF530NPBF
IRF530NPBF



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