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Part Number: IRF530NS/L

 

 

 

 

Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev...


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IRF530NS/L General Description


Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF530NL) is available for low-profile applications.

IRF530NS/L Maximum Ratings

 
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
17
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
12
IDM Pulsed Drain Current
60
PD @TA = 25°C Power Dissipation
3.8
W
PD @TC = 25°C Power Dissipation
79
W
  Linear Derating Factor
0.53
W/°C
VGS Gate-to-Source Voltage
± 20
V
EAS Single Pulse Avalanche Energy
150
mJ
IAR Avalanche Current•9.0
A
A
EAR Repetitive Avalanche Energy
7.9
mJ
dv/dt Peak Diode Recovery dv/dt
5.0
V/ns

TJ
TSTG

Operating Junction and
Storage Temperature Range
-55 to + 175
°C
  Soldering Temperature, for 10 seconds
300 (1.6mm from case )

IRF530NS/L datasheet

IRF034
PDF/DataSheet Download

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