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SeekIC No. : 003433770 Detail

IRF540NL: MOSFET N-CH 100V 33A TO-262

IRF540NL Data Sheet

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Part Number:: IRF540NL
Mfg:
Supply Ability:: 5000

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1~5000

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Upload time: 2024/4/18

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IRF500 evaluate
Features: Narrower body (IRN) will be suitable for high density installation. Light weight silicon...
IRF510 evaluate
US $.78 - .85 / Piece

MOSFET N-Chan 100V 5.6 Amp
IRF510, SiHF510 evaluate
DescriptionPower MOSFET IRF510, SiHF510

Product Details

Quick Details

Series:	HEXFET®	Manufacturer:	International Rectifier
FET Type:	MOSFET N-Channel, Metal Oxide	Transistor Type:	-
Gain :	19.5 dB	Current - Collector (Ic) (Max):	-
FET Feature:	Standard	Drain to Source Voltage (Vdss):	100V
Voltage - Collector Emitter Breakdown (Max):	-	Current - Continuous Drain (Id) @ 25° C:	33A
Vce Saturation (Max) @ Ib, Ic:	-	Current - Collector Cutoff (Max):	-
Rds On (Max) @ Id, Vgs:	44 mOhm @ 16A, 10V	DC Current Gain (hFE) (Min) @ Ic, Vce:	-
Vgs(th) (Max) @ Id:	4V @ 250µA	Gate Charge (Qg) @ Vgs:	71nC @ 10V
Frequency - Transition:	-	Input Capacitance (Ciss) @ Vds:	1960pF @ 25V
Power - Max:	130W	Mounting Type:	Through Hole
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA	Supplier Device Package:	TO-262

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 71nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 33A
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Input Capacitance (Ciss) @ Vds: 1960pF @ 25V
Power - Max: 130W
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 44 mOhm @ 16A, 10V
Supplier Device Package: TO-262

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IRF540NL

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