IRF540NSPBF

MOSFET

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SeekIC No. : 00147858 Detail

IRF540NSPBF: MOSFET

floor Price/Ceiling Price

US $ .73~1.73 / Piece | Get Latest Price
Part Number:
IRF540NSPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.73
  • $1.12
  • $.74
  • $.73
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 33 A
Resistance Drain-Source RDS (on) : 44 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Continuous Drain Current : 33 A
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Package / Case : D2PAK
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Resistance Drain-Source RDS (on) : 44 m Ohms


Features:

` Advanced Process Technology
` Ultra Low On-Resistance
` Dynamic dv/dt Rating
`175 Operating Temperature
` Fast Switching
` Fully Avalanche Rated
` Lead-Free



Specifications

  Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V 33 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V 23
IDM Pulsed Drain Current 110
PD @TC = 25 Power Dissipation 130 W
  Linear Derating Factor 0.87 W/
VGS Gate-to-Source Voltage ± 20 V
IAR Avalanche Current 16 A
EAR Repetitive Avalanche Energy 13 mJ
dv/dt Peak Diode Recovery dv/dt 7.0 V/ns
TJ,TSTG Operating Junction and
Storage Temperature Range
-55 to + 175  
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )
  Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)  



Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRF540NSPbF, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX 4. IRF540NSPbF provides the highest power capability and the lowest possible onresistance in any existing surface mount package.  The D2Pak is suitable for high current applications because of IRF540NSPbF low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRF540NL) is available for lowprofile applications.




Parameters:

Technical/Catalog InformationIRF540NSPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C33A
Rds On (Max) @ Id, Vgs44 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds 1960pF @ 25V
Power - Max130W
PackagingBulk
Gate Charge (Qg) @ Vgs71nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF540NSPBF
IRF540NSPBF



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