IRF540NST

The IRF540NST is designed as one kind of advanced HEXFET® power MOSFET that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The device has some points of features: (1)advanced process technology; (2)dynamic dv/dt rating; (3)175°C operating temperature; (4)fast switching; (5)fully avalanche rated; (6)ease of paralleling; (7)simple drive requirements; (8)lead-free.

The absolute maximum ratings of the IRF540NST can be summarized as:(1)Continuous Drain Current, VGS @ 10V (TC = 25°C): 33 A;(2)Continuous Drain Current, VGS @ 10V (TC = 100°C): 23 A;(3)Pulsed Drain Current: 110 A;(4)Power Dissipation: 130 W;(5)Linear Derating Factor: 0.87 W/°C;(6)Gate-to-Source Voltage: ±20 V;(7)Soldering Temperature, for 10 seconds: 300 (1.6mm from case );(8)Avalanche Current: 16 A;(9)Repetitive Avalanche Energy: 13 mJ;(10)Peak Diode Recovery dv/dt: 7.0 V/ns;(11)Operating Junction and Storage Temperature Range: -55 to +175 °C.

The electrical characteristics of the IRF540NST can be summarized as:(1)Drain-to-Source Breakdown Voltage: 100 V;(2)Breakdown Voltage Temperature Coefficient: 0.12 V/°C;(3)Static Drain-to-Source On-Resistance: 44 m;(4)Gate Threshold Voltage: 2.0 to 4.0 V;(5)Forward Transconductance: 21 S;(6)Total Gate Charge: 71 nC;(7)Gate-to-Source Charge: 14 nC;(8)Gate-to-Drain ("Miller") Charge: 21 nC;(9)Turn-On Delay Time: 11 ns;(10)Turn-Off Delay Time: 39 ns. If you want to know more information such as the electrical characteristics about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .