IRF5802TR

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 900mA
Gate Charge (Qg) @ Vgs: 6.8nC @ 10V
Power - Max: 2W
Series: HEXFET®
Drain to Source Voltage (Vdss): 150V
Packaging: Cut Tape (CT)
Manufacturer: International Rectifier
Package / Case: 6-TSOP (0.059", 1.50mm Width)
Supplier Device Package: Micro6?(TSOP-6)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Input Capacitance (Ciss) @ Vds: 88pF @ 25V
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 540mA, 10V


Parameters:

Technical/Catalog Information	IRF5802TR
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25° C	900mA
Rds On (Max) @ Id, Vgs	1.2 Ohm @ 540mA, 10V
Input Capacitance (Ciss) @ Vds	88pF @ 25V
Power - Max	2W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	6.8nC @ 10V
Package / Case	Micro6?(TSOP-6)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF5802TR IRF5802TR IRF5802TRTR ND IRF5802TRTRND IRF5802TRTR