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IRF5803

Features: · Ultra Low On-Resistance· P-Channel MOSFET· Surface Mount· Available in Tape & Reel· Low Gate ChargePinoutSpecifications Parameter Max. Units VDS Drain-Source Voltage -40 V ID @ TA = 25 Continuous Drain Current, VGS @ -10V -3.4 A ID @ TA = 70 Con...

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SeekIC No. : 004376535 Detail

IRF5803: Features: · Ultra Low On-Resistance· P-Channel MOSFET· Surface Mount· Available in Tape & Reel· Low Gate ChargePinoutSpecifications Parameter Max. Units VDS Drain-Source Voltage...

IRF5803 Data Sheet

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Part Number:
IRF5803
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Ultra Low On-Resistance
· P-Channel MOSFET
· Surface Mount
· Available in Tape & Reel
· Low Gate Charge




Pinout

Connection Diagram




Specifications

Parameter
Max.
Units
VDS Drain-Source Voltage
-40
V
ID @ TA = 25 Continuous Drain Current, VGS @ -10V
-3.4
A
ID @ TA = 70 Continuous Drain Current, VGS @ -10V
-2.7
IDM Pulsed Drain Current
-27
PD @TA = 25 Power Dissipation
2.0
W
PD @TA = 70 Power Dissipation
1.3
Linear Derating Factor
16
W/
VGS Gate-to-Source Voltage
± 20
V
TJ,TSTG Junction and Storage Temperature Range
-55 to + 150





Description

These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit of IRF5803 provides the designer with an extremely efficient device for use in battery and load management applications.

The TSOP-6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package of IRF5803 is ideal for applications where printed circuit board space is at a premium. IRF5803's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.






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