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Part Number: IRF5803
Description: These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced pro...
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IRF5803
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DataSheet
General Description
IRF5803 General Description
These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
The TSOP-6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.
IRF5803 Maximum Ratings
| Parameter |
Max. |
Units | |
| VDS | Drain-Source Voltage |
-40 |
V |
| ID @ TA = 25 | Continuous Drain Current, VGS @ -10V |
-3.4 |
A |
| ID @ TA = 70 | Continuous Drain Current, VGS @ -10V |
-2.7 | |
| IDM | Pulsed Drain Current |
-27 | |
| PD @TA = 25 | Power Dissipation |
2.0 |
W
|
| PD @TA = 70 | Power Dissipation |
1.3 | |
| Linear Derating Factor |
16 |
W/ | |
| VGS | Gate-to-Source Voltage |
± 20 |
V |
| TJ,TSTG | Junction and Storage Temperature Range |
-55 to + 150 |
IRF5803 Features
· Ultra Low On-Resistance
· P-Channel MOSFET
· Surface Mount
· Available in Tape & Reel
· Low Gate Charge
· P-Channel MOSFET
· Surface Mount
· Available in Tape & Reel
· Low Gate Charge
IRF5803 Connection Diagram
IRF5803
PDF/DataSheet Download
- Datasheet: IRF5803
- File Size: 112007 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
- ·IRF034
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 147521 KB
- ·IRF044
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 22513 KB
- ·IRF044SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 21905 KB
- ·IRF054
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 149688 KB
- ·IRF054SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 23141 KB
- ·IRF100
- ETC [ETC]
- 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
- 86902 KB
- ·IRF101
- FAIRCHILD [Fairchild Semiconductor]
- N-Channel Power MOSFETs, 27 A, 60-100V
- 149859 KB
- ·IRF1010E
- IRF [International Rectifier]
- Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A
- 200209 KB
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IRF5801TR
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