IRF5803D2PBF

Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Resistance Drain-Source RDS (on) : 190 mOhms
Configuration : Single Dual Drain
Continuous Drain Current : - 3.4 A
Drain-Source Breakdown Voltage : - 40 V


Features:

· Co-packaged HEXFET® Power MOSFET and Schottky Diode
· Ideal For Buck Regulator Applications
· P-Channel HEXFET®
· Low VF Schottky Rectifier
· SO-8 Footprint
· Lead-Free


Specifications

	Parameter	Maximum	Units
ID @ TA = 25	Continuous Drain Current, VGS @ -10V	-3.4	A
ID @ TA = 70	Continuous Drain Current, VGS @ -10V	-2.7
IDM	Pulsed Drain Current	-27
PD @TA = 25	Power Dissipation	2.0	W
PD @TA = 70	Power Dissipation	1.3
	Linear Derating Factor	16	mW/
VGS	Linear Derating Factor	± 20	V
TJ,TSTG	Junction and Storage Temperature Range	-55 to +150

Description

The FETKY^TM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology of IRF5803D2PbF with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques.

Parameters:

Technical/Catalog Information	IRF5803D2PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	3.4A
Rds On (Max) @ Id, Vgs	112 mOhm @ 3.4A, 10V
Input Capacitance (Ciss) @ Vds	1110pF @ 25V
Power - Max	2W
Packaging	Tube
Gate Charge (Qg) @ Vgs	37nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Diode (Isolated)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF5803D2PBF IRF5803D2PBF