Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Type: MOSFET P-Channel, Metal Oxide
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 4A
Power - Max: 2W
Series: HEXFET®
Packaging: Tube
Manufacturer: International Rectifier
Package / Case: 6-TSOP (0.059", 1.50mm Width)
Supplier Device Package: Micro6?(TSOP-6)
Rds On (Max) @ Id, Vgs: 86 mOhm @ 4A, 4.5V
Gate Charge (Qg) @ Vgs: 11.4nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 594pF @ 15V
Features: · Trench Technology
· Ultra Low On-Resistance
· P-Channel MOSFET
· Available in Tape & ReelPinout
Specifications
|
Parameter |
Max. |
Units |
| VDS |
Drain-Source Voltage |
-20 |
V |
| ID @ TA = 25 |
Continuous Drain Current, VGS @ -4.5V |
-4.0 |
A |
| ID @ TA = 70 |
Continuous Drain Current, VGS @ -4.5V |
-3.3 |
| IDM |
Pulsed Drain Current |
-16.5 |
| PD @TA = 25 |
Maximum Power Dissipation |
2.0 |
W |
| PD @TA = 70 |
Maximum Power Dissipation |
1.3 |
W |
|
Linear Derating Factor |
0.02 |
W/ |
| VGS |
Gate-to-Source Voltage |
± 20 |
V |
| TJ,TSTG |
Junction and Storage Temperature Range |
-55 to + 150 |
|
DescriptionNew trench HEXFET® Power MOSFETs from International Rectifier IRF5806 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer of IRF5806 with an extremely efficient and reliable device for use in battery and load management applications.
IRF5806 Data Sheet
