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IRF5851PbF

Features: · Ultra Low On-Resistance· Dual N and P Channel MOSFET· Surface Mount· Available in Tape & Reel· Low Gate Charge· Lead-FreeSpecifications Parameter Symbol N-Channel P-Channel Unit Continuous Drain Current, VGS @ -10V,Ta = 25 ID 2.7 -2.2 A Continuous Drain Current, ...

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SeekIC No. : 004376542 Detail

IRF5851PbF: Features: · Ultra Low On-Resistance· Dual N and P Channel MOSFET· Surface Mount· Available in Tape & Reel· Low Gate Charge· Lead-FreeSpecifications Parameter Symbol N-Channel P-Channel ...

IRF5851PbF Data Sheet

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Part Number:
IRF5851PbF
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/21

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Product Details

Description



Features:

· Ultra Low On-Resistance
· Dual N and P Channel MOSFET
· Surface Mount
· Available in Tape & Reel
· Low Gate Charge
· Lead-Free


Specifications

Parameter Symbol N-Channel P-Channel Unit
Continuous Drain Current, VGS @ -10V,Ta = 25 ID 2.7 -2.2 A
Continuous Drain Current, VGS @ -10V,Ta = 70 ID 2.2 -1.7 A
Pulsed Drain Current*1 IDM 11 -9.0 A
Power Dissipation Ta = 25 PD 0.96 0.96 W
Power Dissipation Ta = 70 PD 0.62 0.62 W
Linear Derating Factor   7.7 7.7 /mW
Gate-to-Source Voltage VGS ±12 ±12 V
Drain-to-Source Voltage VDS 20 -20 mJ
Operating Junction and Storage Temperature Range TJ,TSTG -55 to + 150 -55 to + 150



Description

These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit of IRF5851PbF provides the designer with an extremely efficient device for use in battery and load management applications.

This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required. With two die per package, the IRF5851 can provide the functionality of two SOT-23 packages in a smaller footprint. IRF5851PbF is unique thermal design and RDS(on) reduction enables an increase in current-handling capability.




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