Position: Home  > All Categories> Integrated Circuits (ICs) > IRF5NJ540

IRF5NJ540

Features: · Low RDS(on)· Avalanche Energy Ratings· Dynamic dv/dt Rating· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Light WeightSpecifications Parameter Units ID @ VGS = 10V,TC = 25 Continuous Drain Current 22* A ID @ VGS = ...

product image

IRF5NJ540 Picture
See larger image
SeekIC No. : 004376557 Detail

IRF5NJ540: Features: · Low RDS(on)· Avalanche Energy Ratings· Dynamic dv/dt Rating· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Light WeightSpecifications ...

IRF5NJ540 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRF5NJ540
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/5/8

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· Low RDS(on)
· Avalanche Energy Ratings
· Dynamic dv/dt Rating
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Light Weight


Specifications

Parameter
Units
ID @ VGS = 10V,TC = 25 Continuous Drain Current
22*
A
ID @ VGS = 10V,TC = 100 Continuous Drain Current
16
IDM Pulsed Drain Current
88
PD @TC = 25 Max. Power Dissipation
75
W
Linear Derating Factor
0.60
W/
VGS Gate-to-Source Voltage
± 20
V
EAS Single Pulse Avalanche Energy
200
mJ
IAR Avalanche Current
16
A
EAR Repetitive Avalanche Energy
7.5
mJ
dv/dt Peak Diode Recovery dv/dt
4.1
V/ns
TJ,TSTG Operating Junction Storage Temperature Range
-55 to + 150
Lead Temperature
300 ( for 5s)
Weight
10
g
* Current is limited by package


Description

Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit of IRF5NJ540, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device of IRF5NJ540for use in a wide variety of applications.

IRF5NJ540 are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Test Equipment
TOP853
TOP2005
Crystals and Oscillators
WT325BI0030.000000
2SB49
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
Memory Cards, Modules
WT32
VTL5C7
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
RF and RFID
X3C26P1-30S
1P620S
View more