MFG:IR Package Cooled:SMD-0.5 D/C:00+
MFG: IR
Package Cooled: SMD-0.5
D/C: 00+
Description: Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced pr...
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.
| Parameter |
Units | ||
| ID @ VGS = 10V,TC = 25 | Continuous Drain Current |
22* |
A |
| ID @ VGS = 10V,TC = 100 | Continuous Drain Current |
16 | |
| IDM | Pulsed Drain Current |
88 | |
| PD @TC = 25 | Max. Power Dissipation |
75 |
W |
| Linear Derating Factor |
0.60 |
W/ | |
| VGS | Gate-to-Source Voltage |
± 20 |
V |
| EAS | Single Pulse Avalanche Energy |
200 |
mJ |
| IAR | Avalanche Current |
16 |
A |
| EAR | Repetitive Avalanche Energy |
7.5 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt |
4.1 |
V/ns |
| TJ,TSTG | Operating Junction Storage Temperature Range |
-55 to + 150 |
|
| Lead Temperature |
300 ( for 5s) | ||
| Weight |
10 |
g |
IRF5NJ540
PDF/DataSheet Download
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit of IRF5NJ5305, combined with the fast switching speed and ruggediz...
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