Features: Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of ParallelingHermetically Sealed Surface MountLight WeightSpecifications Parameter Units ID @ VGS = 10V, TC = 25°C tinuous Drain Current 22* A ID @ VGS = 10V, TC = 100°C Con...
IRF5NJZ34: Features: Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of ParallelingHermetically Sealed Surface MountLight WeightSpecifications Parameter Unit...
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| Parameter | Units | ||
| ID @ VGS = 10V, TC = 25°C | tinuous Drain Current |
22* |
A |
| ID @ VGS = 10V, TC = 100°C | Continuous Drain Current |
16 | |
| IDM | Pulsed Drain Current |
88 | |
| PD @ TC = 25°C | Max. Power Dissipation |
40 |
W |
| Linear Derating Factor |
0.32 |
W/ | |
| VGS | Gate-to-Source Voltage |
±20 |
V |
| EAS | Single Pulse Avalanche Energy |
43 |
mJ |
| IAR | Avalanche Current |
22 |
A |
| EAR | Repetitive Avalanche Energy |
4.0 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt |
1.8 |
V/ns |
| TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 |
|
| Package Mounting Surface Temperature |
300 (for 5 s) | ||
| Weight |
1.0 |
g |
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit of IRF5NJZ34, combined with the fast switching speed and ruggedized device design tht HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
IRF5NJZ34 are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.