Purchase IRF5Y1310CM, In-stock IRF5Y1310CM From SeekIC.
MFG:IR Package Cooled:TO-257AA D/C:00+
- Table of contents:
IRF5Y1310CM
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Suppliers
DataSheet
General Description
IRF5Y1310CM Maximum Ratings
| Parameter | Units | ||
| ID @ VGS = 10V, TC = 25°C | Continuous Drain Current | 18* | A |
| ID @ VGS = 10V, TC = 100°C | Continuous Drain Current | 18* | |
| IDM | Pulsed Drain Current | 72 | |
| PD @ TC = 25°C | Max. Power Dissipation | 100 | W |
| Linear Derating Factor | 0.8 | W/°C | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 210 | mJ |
| IAR | Avalanche Current | 18 | A |
| EAR | Repetitive Avalanche Energy | 10 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 3.8 | V/ns |
| TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 | oC |
| Lead Temperature | 300 (0.063in./1.6mm from case for 10sec) | ||
| Weight | 4.3 (Typical) | g |
IRF5Y1310CM Features
Low RDS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
IRF5Y1310CM Typical Application
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,provides the designer with an extremely efficient device for use in a wide variety of applications.
These devices are well-suited for applications such as switching power supplies, motor controls, inverters,choppers, audio amplifiers and high-energy pulse circuits.
These devices are well-suited for applications such as switching power supplies, motor controls, inverters,choppers, audio amplifiers and high-energy pulse circuits.
IRF5Y1310CM
PDF/DataSheet Download
- Datasheet: IRF5Y1310CM
- File Size: 109578 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
- ·IRF034
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 147521 KB
- ·IRF044
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 22513 KB
- ·IRF044SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 21905 KB
- ·IRF054
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 149688 KB
- ·IRF054SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 23141 KB
- ·IRF100
- ETC [ETC]
- 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
- 86902 KB
- ·IRF101
- FAIRCHILD [Fairchild Semiconductor]
- N-Channel Power MOSFETs, 27 A, 60-100V
- 149859 KB
- ·IRF1010E
- IRF [International Rectifier]
- Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A
- 200209 KB
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