Position: Home > Datasheet list > IRF Series > Index I > IRF5Y31N20
Electronica China

Purchase IRF5Y31N20, In-stock IRF5Y31N20 From SeekIC.

MFG:IR  Package Cooled:TO-257AA  D/C:00+  

IRF5Y31N20 Product Image

IRF Series Datasheet download

Five Points

Part Number: IRF5Y31N20

 

MFG: IR

Package Cooled: TO-257AA

D/C: 00+

Description: Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniqu...


Urgent Purchase

IRF5Y31N20 General Description


Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,provides the designer with an extremely efficient device for use in a wide variety of applications.

These devices are well-suited for applications such as switching power supplies, motor controls, inverters,choppers, audio amplifiers and high-energy pulse circuits.

IRF5Y31N20 Maximum Ratings

  Parameter   Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 18* A
ID @ VGS = 10V, TC = 100°C Continuous Drain Current 14
IDM Pulsed Drain Current 72
PD @ TC = 25°C Max. Power Dissipation 100 W
  Linear Derating Factor 0.8 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 170 mJ
IAR Avalanche Current 18 A
EAR Repetitive Avalanche Energy 10 mJ
dv/dt Peak Diode Recovery dv/dt 1.7 V/ns
TJ
TSTG
 Operating Junction
Storage Temperature Range


 -55 to 150
  Lead Temperature 300 (0.063in./1.6mm from case for 10sec)
  Weight 4.3 (Typical) g
* Current is limited by package

IRF5Y31N20 Features

Low RDS(on)
Avalanche Energy Ratings
 Dynamic dv/dt Rating
 Simple Drive Requirements
 Ease of Paralleling
 Hermetically Sealed
 Light Weight

IRF5Y31N20 datasheet

IRF5Y31N20
PDF/DataSheet Download

Find IRF5Y31N20 Suppliers

  • ·IRF034
  • IRF [International Rectifier] 
  • REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) 
  • 147521 KB
  • IRF034 Datasheet Download
  • ·IRF044
  • SEME-LAB [Seme LAB] 
  • N-CHANNEL POWER MOSFET 
  • 22513 KB
  • IRF044 Datasheet Download
  • ·IRF044SMD
  • SEME-LAB [Seme LAB] 
  • N-CHANNEL POWER MOSFET 
  • 21905 KB
  • IRF044SMD Datasheet Download
  • ·IRF054
  • IRF [International Rectifier] 
  • REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) 
  • 149688 KB
  • IRF054 Datasheet Download
  • ·IRF054SMD
  • SEME-LAB [Seme LAB] 
  • N-CHANNEL POWER MOSFET 
  • 23141 KB
  • IRF054SMD Datasheet Download
  • ·IRF100
  • ETC [ETC] 
  • 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED 
  • 86902 KB
  • IRF100 Datasheet Download
  • ·IRF101
  • FAIRCHILD [Fairchild Semiconductor] 
  • N-Channel Power MOSFETs, 27 A, 60-100V 
  • 149859 KB
  • IRF101 Datasheet Download
  • ·IRF1010E
  • IRF [International Rectifier] 
  • Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A 
  • 200209 KB
  • IRF1010E Datasheet Download

Related Part Number

IRF5Y31N20 Relative Products

  • IRF5Y1310CM

    IRF5Y1310CM

  • IRF5NJZ48

    IRF5NJZ48

    Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit of IRF5NJZ48, combined with the fast switching speed and ruggedize...

  • IRF5NJZ34

    IRF5NJZ34

    Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit of IRF5NJZ34, combined with the fast switching speed and ruggedize...

  • IRF5NJ9540

    IRF5NJ9540

    Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit of IRF5NJ9540, combined with the fast switching speed and ruggediz...

  • IRF5NJ6215

    IRF5NJ6215

    Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit of IRF5NJ6215, combined with the fast switching speed and ruggediz...

  • IRF5NJ540

    IRF5NJ540

    Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit of IRF5NJ540, combined with the fast switching speed and ruggedize...

Hotspot Suppliers Product

Product List

  • Models: TAJR226K010RNJ Price: 0.01-2 USD

    TAJR226K010RNJ

    Price: 0.01-2 USD

    Tantalum Capacitor, 47uF, Surface Mount, 25V, AVX Corporation

  • Models: ATMEGA128-16AU Price: 1-2 USD

    ATMEGA128-16AU

    Price: 1-2 USD

    High-performance, Low-power, 8-bit Microcontroller, On-chip Analog Comparator, DIP

  • Models: GS3780-174-001Z Price: 2.6-3 USD

    GS3780-174-001Z

    Price: 2.6-3 USD

    GS3780-174-001Z, TQFP, Conexant

  • Models: G86-631-A2 Price: 32-35 USD

    G86-631-A2

    Price: 32-35 USD

    DIrectX 10 capable successor, BGA, video card, 337.5MHz, NVIDIA Corporation, G86-631-A2

  • Models: PS21564 Price: 4-6 USD

    PS21564

    Price: 4-6 USD

    MODULE, dual-in-line package, intelligent power module, 450V, 30A, 22.2W, 15A, Single Power Supply...

  • Models: DS3696N Price: 1.6-2.2 USD

    DS3696N

    Price: 1.6-2.2 USD

    repeater, DIP, 7V

  • Models: 2SC5185-T1B Price: 0.075-0.085 USD

    2SC5185-T1B

    Price: 0.075-0.085 USD

    transistor, sot-343, 5 V

  • Models: 6MBI25S-120 Price: 50-70 USD

    6MBI25S-120

    Price: 50-70 USD

    IGBT module, 180W, 25A, 1200V, 6MBI25S-120, Fuji Electric

  • Models: M25P10-AVMN6TP Price: 0.1-0.1 USD

    M25P10-AVMN6TP

    Price: 0.1-0.1 USD

    1 Mbit, serial Flash memory, 50 MHz SPI bus interface, Bulk Erase (1 Mbit), SOP-8

  • Models: AD1881A-JSTZ Price: 6.35-6.4 USD

    AD1881A-JSTZ

    Price: 6.35-6.4 USD

    Audio Codec 2ADC, QFP-48, –0.3 to +3.6 V, Stereo Line-Level Output

  • Models: DF30AA160 Price: 14.5-15 USD

    DF30AA160

    Price: 14.5-15 USD

    Power Diode Module, three phases bridge type, 1600V, 30Amp, DF30AA160

  • Models: LPC2148FBD64 Price: 5.8-6 USD

    LPC2148FBD64

    Price: 5.8-6 USD

    Single-chip, microcontrollers, Single 10-bit DAC, QFP, Low power Real-Time Clock

Map list:   ABCDEFGHIJKLMNOPQRSTUVWXYZ    0123456789All