IRF5Y31N20

Features:

Low R_DS(on)
Avalanche Energy Ratings
 Dynamic dv/dt Rating
 Simple Drive Requirements
 Ease of Paralleling
 Hermetically Sealed
 Light Weight


Specifications

	Parameter		Units
ID @ VGS = 10V, TC = 25°C	Continuous Drain Current	18*	A
ID @ VGS = 10V, TC = 100°C	Continuous Drain Current	14
IDM	Pulsed Drain Current	72
PD @ TC = 25°C	Max. Power Dissipation	100	W
	Linear Derating Factor	0.8	W/°C
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	170	mJ
IAR	Avalanche Current	18	A
EAR	Repetitive Avalanche Energy	10	mJ
dv/dt	Peak Diode Recovery dv/dt	1.7	V/ns
TJ TSTG	Operating Junction Storage Temperature Range	-55 to 150
	Lead Temperature	300 (0.063in./1.6mm from case for 10sec)
	Weight	4.3 (Typical)	g

* Current is limited by package



Description

Fifth Generation HEXFET^® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit of IRF5Y31N20, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,provides the designer with an extremely efficient device of IRF5Y31N20 for use in a wide variety of applications.

IRF5Y31N20 are well-suited for applications such as switching power supplies, motor controls, inverters,choppers, audio amplifiers and high-energy pulse circuits.