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MFG:IR  Package Cooled:TO-257AA  D/C:00+  

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Part Number: IRF5Y5305CM

 

MFG: IR

Package Cooled: TO-257AA

D/C: 00+

Description: Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniqu...


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IRF5Y5305CM General Description


Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,provides the designer with an extremely efficient device for use in a wide variety of applications.

These devices are well-suited for applications such as switching power supplies, motor controls, inverters,choppers, audio amplifiers and high-energy pulse circuits.

IRF5Y5305CM Maximum Ratings

  Parameter   Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current -18* A
ID @ VGS = 10V, TC = 100°C Continuous Drain Current -15
IDM Pulsed Drain Current -72
PD @ TC = 25°C Max. Power Dissipation 75 W
  Linear Derating Factor 0.6 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 160 mJ
IAR Avalanche Current -16 A
EAR Repetitive Avalanche Energy 7.5 mJ
dv/dt Peak Diode Recovery dv/dt 3.0 V/ns
TJ
TSTG
 Operating Junction
Storage Temperature Range


 -55 to 150
  Lead Temperature 300 (0.063in./1.6mm from case for 10sec)
  Weight 4.3 (Typical) g
* Current is limited by package

IRF5Y5305CM Features

Low RDS(on)
 Avalanche Energy Ratings
 Dynamic dv/dt Rating
 Simple Drive Requirements
 Ease of Paralleling
 Hermetically Sealed
 Light Weight

IRF5Y5305CM datasheet

IRF5Y5305CM
PDF/DataSheet Download

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