IRF614

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 250 V
Continuous Drain Current : 2.7 A
Resistance Drain-Source RDS (on) : 2 Ohms


Features:

• 2.0A, 250V
• rDS(ON) = 2.0
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
    - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

		IRF614	UNITS
Drain to Source Voltage (Note 1)	VDS	250	V
Drain to Gate Voltage (RGS = 20kW) (Note 1)	VDGR	250	V
Continuous Drain Current	ID	2.0	A
TC = 100	ID	1.3	A
Pulsed Drain Current (Note 3)	IDM	8.0	A
Gate to Source Voltage	VGS	±20	V
Maximum Power Dissipation	PD	20	W
Linear Derating Factor		0.16	W/
Single Pulse Avalanche Energy Rating (Note 4)	EAS	61	mJ
Operating and Storage Temperature	TJ, TSTG	-55 to 150
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s	TL	300
Package Body for 10s, See Techbrief 334	Tpkg	260

T_J = 25 to 125.


Description

This is an N-Channel enhancement mode silicon gate power field effect transistor. IRF614 is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.This power MOSFET of IRF614 is designed for applications such as switching regulators, switching converters, motor drivers,relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.This type of IRF614 can be operated directly from integrated circuits.

Formerly developmental type TA17443.