IRF614S

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Continuous Drain Current : 2.7 A
Resistance Drain-Source RDS (on) : 2 Ohms


Description

The IRF614S is a kind of International rectifier, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. It is available in SMD-220 package and is suitable for high current applications.

IRF614S has some features as follows. (1) surface mount; (2) available in tape and reel; (3) dynamic dv/dt rating; (4) repetitive avalanche rated; (5) fast switching; (6) ease of paralleling; (7) simple drive requirements.

The following is about IRF614S absolute maximum ratings. (1): continuous drain current is 2.7 A at TC is 25 and is 1.7 A at TC is 100 . (2): power dissipation is 36 W at TC is 25 and is 3.1 W at TA is 25 ; (3): single pulse avalanche energy is 61 mJ; (4): repetitive avalanche energy is 3.6 mJ; (5): junction and storage temperature are from -55 to 175 ; (6): soldering temperature for 10 seconds is 300 . Then is about the electrical characteristics at TJ is 25 . (1): the minimum drain-to-source breakdown voltage is 250 V when VGS is 0 V and ID is 250 A; (2): the typical turn-on delay time is 7.0 ns, rise time is 7.6 ns, turn-off delay time is 16 ns and fall time is 7.0 ns at VDD is 50 V and ID is 9.2 A; (3): the typical input capacitance is 140 pF, output capacitance is 42 pF and reverse transfer capacitance is 9.6 pF when VDS is 25 V and f is 1.0 MHz.