Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Mounting Style
: SMD/SMT
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Drain-Source Breakdown Voltage
: 200 V
Continuous Drain Current
: 5.2 A
Resistance Drain-Source RDS (on)
: 0.8 Ohms
Package / Case
: SMD-220
DescriptionThe IRF620S is a kind of International rectifier, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. It is available in SMD-220 package and is suitable for high current applications.
IRF620S has some features as follows. (1) surface mount; (2) available in tape and reel; (3) dynamic dv/dt rating; (4) repetitive avalanche rated; (5) fast switching; (6) ease of paralleling; (7) simple drive requirements.
The following is about the absolute maximum ratings IRF620S. (1): continuous drain current is 5.2 A at TC is 25 and is 3.3 A at TC is 100 . (2): power dissipation is 50 W at TC is 25 and is 3.0 W at TA is 25 ; (3): single pulse avalanche energy is 110 mJ; (4): repetitive avalanche energy is 5.0 mJ; (5): junction and storage temperature are from -55 to 175 ; (6): soldering temperature for 10 seconds is 300 . Then is about the electrical characteristics at TJ is 25 . (1): the minimum drain-to-source breakdown voltage is 200 V when VGS is 0 V and ID is 250 A; (2): the typical turn-on delay time is 7.2 ns, rise time is 22 ns, turn-off delay time is 19 ns and fall time is 13 ns at VDD is 50 V and ID is 9.2 A; (3): the typical input capacitance is 260 pF, output capacitance is 100 pF and reverse transfer capacitance is 30 pF when VDS is 25 V and f is 1.0 MHz.
IRF620S Data Sheet
