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IRF620STRR

MOSFET N-CH 200V 5.2A D2PAK

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SeekIC No. : 003433815 Detail

IRF620STRR: MOSFET N-CH 200V 5.2A D2PAK

IRF620STRR Data Sheet

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Part Number:
IRF620STRR
Mfg:
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Series: - Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Standard
Continuous Drain Current : 15 A Drain to Source Voltage (Vdss): 200V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 5.2A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 800 mOhm @ 3.1A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) @ Vgs: 14nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 260pF @ 25V
Power - Max: 3W Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK    

Description

Series: -
Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Packaging: Tape & Reel (TR)
Power - Max: 3W
Vgs(th) (Max) @ Id: 4V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 5.2A
Drain to Source Voltage (Vdss): 200V
Gate Charge (Qg) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) @ Vds: 260pF @ 25V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Rds On (Max) @ Id, Vgs: 800 mOhm @ 3.1A, 10V


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