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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 150 V | ||
| Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | - 2.2 A | ||
| Resistance Drain-Source RDS (on) : | 240 mOhms | Configuration : | Single Quad Drain Triple Source | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | SOIC-8 | Packaging : | Tube |

| Parameter |
Max. |
Units | |
| ID @ TA= 25 | Continuous Drain Current, VGS @ 10V |
-2.2 |
A |
| ID @ TA= 70 | Continuous Drain Current, VGS @ 10V |
-1.9 | |
| IDM | Pulsed Drain Current |
-19 | |
| PD @TA = 25 | Max. Power Dissipation |
2.5 |
W |
| Linear Derating Factor0 |
0.02 |
W/ | |
| VGS | Gate-to-Source Voltage |
± 20 |
V |
| dv/dt | Peak Diode Recovery dv/dt |
7.8 |
V/ns |
| TJ,TSTG | Operating Junction Storage Temperature Range |
-55 to + 150 |
|
| Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
| Technical/Catalog Information | IRF6216PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25° C | 2.2A |
| Rds On (Max) @ Id, Vgs | 240 mOhm @ 1.3A, 10V |
| Input Capacitance (Ciss) @ Vds | 1280pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 49nC @ 10V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF6216PBF IRF6216PBF |