MOSFET N-Chan 250V 4.4 Amp
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 250 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 4.4 A | ||
| Resistance Drain-Source RDS (on) : | 1.1 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220AB | Packaging : | Tube |
The IRF624PbF has 6 features.The first one is dynamic dv/dt rating.The second one is repetitive avalanche rated.The third one is fast switching.The fourth one is ease of paralleting.The fifth one is simple drive requirements.The sixth one is lead-free.
Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching,ruggedized device design,low on resistance and cost-effectiveness.The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation ;evels to approximately 50 watts.The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
The IRF624PbF has some information abou absolut maximum ratings.ID @ Tc = 25 ,when parameter is continuous drain current,VGS @ 10 V,the max is 4.4,the unit is A.ID @ Tc = 100 ,when parameter is continuous drain current,VGS @ 10 V,the max is 2.8,the unit is A.IDM,when parameter is pulsed drain current,,the max is 14,the unit is A.PD @ Tc=25,when parameter of the IRF624PbF is power dissipation,the max is 50,the unit is W.When parameter is Linear derating factor,the max is 0.40,the unit is W/.VGS,when parameter is gate-to-source voltage,the max is ±20,the unit is V.EAS,when parameter is single pulse avalanche energy,the max is 100,the unit is mJ.IAR,when parameter is avalanche current,the max is 4.4,the unit is A.EAR,when parameter is repetitive avalanche energy,the max is 5.0,the unit is mJ.dv/dt,when parameter is peak diode recovery dt/dv,the max is 4.8,the unit is V/nS.
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