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MFG:ST  Package Cooled:TO-220F  D/C:09+  

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Part Number: IRF630FP

 

MFG: ST

Package Cooled: TO-220F

D/C: 09+

Description: This power MOSFET is designed using he company's consolidated strip layout-based MESH OVERLAY™ p...


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IRF630FP General Description


This power MOSFET is designed using he company's consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.

IRF630FP Maximum Ratings

Symbol Parameter
Value
Unit
IRF630
IRF630FP
VDS Collector-Source Voltage (VGS = 0 V)
200
V
VDGR Drain-gate Voltage (RGS = 20 k)

200
V
VGS Gate-Source Voltage
±20
V
ID Drain Current (continuous) at TC = 25
9
9(**)
A
ID Drain Current (continuous) at TC = 100
5.7
5.7(**)
A
IDM(`) Drain Current (pulsed)
36
36
A
Ptot Total Dissipation at TC = 25
75
25
W
Derating Factor
0.6
0.20
W/
dv/dt (1) Peak Diode Recovery voltage slope
5
5
 V/ns
VISO Insulation Withstand Voltage (DC)
-
2000
V
Tstg Storage Temperature
-60 to 150
Tj Operating Junction Temperature
150
(•) Pulse width limited by safe operating area
( 1) ISD 9A, di/dt 300 A/ms, VDD V(BR)DSS, Tj TJMAX
First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet
(**) Limited only by Maximum Temperature Allowed

IRF630FP Features

 ` TYPICAL RDS(on) = 0.35
 ` EXTREMELY HIGH dV/dt CAPABILITY
 ` VERY LOW INTRINSIC CAPACITANCES
 ` GATE CHARGE MINIMIZED

IRF630FP Typical Application

· HIGH CURRENT SWITCHING
· UNINTERRUPTIBLE POWER SUPPLY (UPS)
· DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.

IRF630FP datasheet

IRF630FP
PDF/DataSheet Download

  • Datasheet: IRF630FP
  • File Size: 107273 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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