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IRF630M

Features: ` TYPICAL RDS(on) = 0.35 ` EXTREMELY HIGH dv/dt CAPABILITY` VERY LOW INTRINSIC CAPACITANCES` GATE CHARGE MINIMIZEDApplication· MONITOR DISPLAYS· GENERAL PURPOSE SWITCHSpecifications Symbol Parameter Value Unit IRF630M IRF630MFP VDS Collector-Source Voltage (VGS = ...

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SeekIC No. : 004376600 Detail

IRF630M: Features: ` TYPICAL RDS(on) = 0.35 ` EXTREMELY HIGH dv/dt CAPABILITY` VERY LOW INTRINSIC CAPACITANCES` GATE CHARGE MINIMIZEDApplication· MONITOR DISPLAYS· GENERAL PURPOSE SWITCHSpecifications S...

IRF630M Data Sheet

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Part Number:
IRF630M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 `  TYPICAL RDS(on) = 0.35
 `  EXTREMELY HIGH dv/dt CAPABILITY
 `  VERY LOW INTRINSIC CAPACITANCES
 `  GATE CHARGE MINIMIZED


Application

 ·  MONITOR DISPLAYS
 ·  GENERAL PURPOSE SWITCH


Specifications

Symbol Parameter
Value
Unit
IRF630M
IRF630MFP
VDS Collector-Source Voltage (VGS = 0 V)
200
V
VDGR Drain-gate Voltage (RGS = 20 k)

200
V
VGS Gate-Source Voltage
±20
V
ID Drain Current (continuous) at TC = 25
9
9(**)
A
ID Drain Current (continuous) at TC = 100
5.7
5.7(**)
A
IDM(`) Drain Current (pulsed)
36
36
A
Ptot Total Dissipation at TC = 25
75
30
W
Derating Factor
0.6
0.24
W/
dv/dt (1) Peak Diode Recovery voltage slope
5
5
 V/ns
VISO Insulation Withstand Voltage (DC)
-
2500
V
Tstg Storage Temperature
-60 to 150
Tj Operating Junction Temperature
150
(•)Pulse width limited by safe operating area
(1)ISD9A, di/dt300A/s, VDD V(BR)DSS, Tj TJMAX.
(**) Limited only by Maximum Temperature Allowed


Description

This power MOSFET IRF630M is designed using the company's consolidated strip layout-based MESH OVERLAY ™ process. This technology matches and improves the performances compared with standard parts from various sources.

Isolated TO-220 option simplifies assembly and cuts risk of accidental short circuit IRF630M in crowded monitor PCB's.




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