MFG:ST Package Cooled:03+ D/C:TO-220F
MFG: ST
Package Cooled: 03+
D/C: TO-220F
Description: This power MOSFET is designed using the company's consolidated strip layout-based MESH OVERLAY ™...
This power MOSFET is designed using the company's consolidated strip layout-based MESH OVERLAY ™ process. This technology matches and improves the performances compared with standard parts from various sources.
Isolated TO-220 option simplifies assembly and cuts risk of accidental short circuit in crowded monitor PCB's.
| Symbol | Parameter |
Value |
Unit | |
|
IRF630M |
IRF630MFP | |||
| VDS | Collector-Source Voltage (VGS = 0 V) |
200 |
V | |
| VDGR | Drain-gate Voltage (RGS = 20 k) |
200 |
V | |
| VGS | Gate-Source Voltage |
±20 |
V | |
| ID | Drain Current (continuous) at TC = 25 |
9 |
9(**) |
A |
| ID | Drain Current (continuous) at TC = 100 |
5.7 |
5.7(**) |
A |
| IDM(`) | Drain Current (pulsed) |
36 |
36 |
A |
| Ptot | Total Dissipation at TC = 25 |
75 |
30 |
W |
| Derating Factor |
0.6 |
0.24 |
W/ | |
| dv/dt (1) | Peak Diode Recovery voltage slope |
5 |
5 |
V/ns |
| VISO | Insulation Withstand Voltage (DC) |
- |
2500 |
V |
| Tstg | Storage Temperature |
-60 to 150 |
||
| Tj | Operating Junction Temperature |
150 | ||
IRF630MFP
PDF/DataSheet Download
This power MOSFET IRF630Mis designed using the company's consolidated strip layout-based MESH OVERLAY ™ process. This technology matches and improves the performances compared with standard parts from various sources.Isolated TO-220 option simplifies a...
This power MOSFET IRF630FPis designed using he company's consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.
`With TO-220F package IRF630F`Low on-stateand thermal resistance`Fast switching`VDSS=200V; RDS(ON)0.4;ID=9A`1.gate 2.drain 3.source
MOSFET N-CH 200V 9A TO-220
MOSFET N-CH 200V 9A TO-220
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