MFG:IR Package Cooled:TO-262 D/C:5000
MFG: IR
Package Cooled: TO-262
D/C: 5000
Description: Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced pr...
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF630NL) is available for lowprofile application.
| Parameter |
Max. |
Units | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V |
9.3 |
A |
| ID @ TC = 100 | Continuous Drain Current, VGS @ 10V |
6.5 | |
| IDM | Pulsed Drain Current |
37 | |
| PD @TC = 25 | Max. Power Dissipation |
82 |
W |
| Linear Derating Factor0 |
0.5 |
W/ | |
| VGS | Gate-to-Source Voltage |
± 20 |
V |
| EAS | Single Pulse Avalanche Energy |
94 |
mJ |
| IAR | Avalanche Current |
9.3 |
A |
| EAR | Repetitive Avalanche Energy |
8.2 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt |
8.1 |
V/ns |
| TJ,TSTG | Operating Junction Storage Temperature Range |
-55 to + 175 |
|
| Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) | ||
| Mounting torque, 6-32 or M3 screw |
10 lbf•in (1.1N•m) |
IRF630NL
PDF/DataSheet Download
Fifth Generation HEXFET® Power MOSFETs IRF630N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design ...
This power MOSFET IRF630MFPis designed using the company's consolidated strip layout-based MESH OVERLAY ™ process. This technology matches and improves the performances compared with standard parts from various sources.Isolated TO-220 option simplifies...
This power MOSFET IRF630Mis designed using the company's consolidated strip layout-based MESH OVERLAY ™ process. This technology matches and improves the performances compared with standard parts from various sources.Isolated TO-220 option simplifies a...
This power MOSFET IRF630FPis designed using he company's consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.
`With TO-220F package IRF630F`Low on-stateand thermal resistance`Fast switching`VDSS=200V; RDS(ON)0.4;ID=9A`1.gate 2.drain 3.source
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