Purchase IRF630NLPbF, In-stock IRF630NLPbF From SeekIC.
Part Number: IRF630NLPbF
Description: Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced pr...
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IRF630NLPbF
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DataSheet
General Description
IRF630NLPbF General Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF630NL) is available for lowprofile application.
IRF630NLPbF Maximum Ratings
| Parameter |
Max. |
Units | |
| ID @ TC = 25 | Continuous Drain Current,VGS @ 10V |
9.3 |
A |
| ID @ TC = 100 | Continuous Drain Current,VGS @ 10V |
6.5 | |
| IDM | Pulsed Drain Current |
37 | |
| PD @ TC = 25 | Power Dissipation |
82 |
W |
| Linear Derating Factor |
0.5 |
W/ | |
| VGS | Gate-to-Source Voltage |
±20 |
V |
| EAS | Single Pulse Avalanche Energy |
94 |
mJ |
| IAR | Avalanche Current |
9.3 |
A |
| EAR | Repetitive Avalanche Energy |
8.2 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt |
8.1 |
V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to 175 |
|
| Soldering Temperature, for 10 seconds |
300(1.6mm from case ) | ||
| Mounting torque, 6-32 or M3 srew | 10 lbf`in (1.1N`m) |
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25, L = 6.5mH RG = 25, IAS = 5.4A.
ISD 5.4A,di/dt280A/µs, VDDV(BR)DSS, TJ 175.
This is only applied to TO-220AB package.
IRF630NLPbF Features
` Advanced Process Technology
` Dynamic dv/dt Rating
` 175Operating Temperature
` Fast Switching
` Fully Avalanche Rated
` Ease of Paralleling
` Simple Drive Requirements
` Lead-Free
` Dynamic dv/dt Rating
` 175Operating Temperature
` Fast Switching
` Fully Avalanche Rated
` Ease of Paralleling
` Simple Drive Requirements
` Lead-Free
IRF034
PDF/DataSheet Download
- Datasheet: IRF034
- File Size: 147521 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
- ·IRF044
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 22513 KB
- ·IRF044SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 21905 KB
- ·IRF054
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
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- ·IRF054SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 23141 KB
- ·IRF100
- ETC [ETC]
- 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
- 86902 KB
- ·IRF101
- FAIRCHILD [Fairchild Semiconductor]
- N-Channel Power MOSFETs, 27 A, 60-100V
- 149859 KB
- ·IRF1010E
- IRF [International Rectifier]
- Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A
- 200209 KB
- ·IRF1010EL
- IRF [International Rectifier]
- Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
- 126916 KB
IRF630NLPbF Relative Products
IRF630NL
Fifth Generation HEXFET® Power MOSFETs IRF630NL from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design...
IRF630N
Fifth Generation HEXFET® Power MOSFETs IRF630N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design ...
IRF630MFP
This power MOSFET IRF630MFPis designed using the company's consolidated strip layout-based MESH OVERLAY ™ process. This technology matches and improves the performances compared with standard parts from various sources.Isolated TO-220 option simplifies...
IRF630M
This power MOSFET IRF630Mis designed using the company's consolidated strip layout-based MESH OVERLAY ™ process. This technology matches and improves the performances compared with standard parts from various sources.Isolated TO-220 option simplifies a...
IRF630FP
This power MOSFET IRF630FPis designed using he company's consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.
IRF630F
`With TO-220F package IRF630F`Low on-stateand thermal resistance`Fast switching`VDSS=200V; RDS(ON)0.4;ID=9A`1.gate 2.drain 3.source
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