IRF630NPBF

MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC

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SeekIC No. : 00149798 Detail

IRF630NPBF: MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC

floor Price/Ceiling Price

US $ .59~1.48 / Piece | Get Latest Price
Part Number:
IRF630NPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.48
  • $.91
  • $.62
  • $.59
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 9.3 A
Resistance Drain-Source RDS (on) : 300 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 200 V
Resistance Drain-Source RDS (on) : 300 mOhms
Continuous Drain Current : 9.3 A


Features:

` Advanced Process Technology
` Dynamic dv/dt Rating
` 175Operating Temperature
` Fast Switching
` Fully Avalanche Rated
` Ease of Paralleling
` Simple Drive Requirements
` Lead-Free





Specifications

Parameter
Max.
Units
ID @ TC = 25 Continuous Drain Current,VGS @ 10V
9.3
A
ID @ TC = 100 Continuous Drain Current,VGS @ 10V
6.5
IDM Pulsed Drain Current
37
PD @ TC = 25 Power Dissipation
82
W
Linear Derating Factor
0.5
W/
VGS Gate-to-Source Voltage
±20
V
EAS Single Pulse Avalanche Energy
94
mJ
IAR Avalanche Current
9.3
A
EAR Repetitive Avalanche Energy
8.2
mJ
dv/dt Peak Diode Recovery dv/dt
8.1
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to 175
Soldering Temperature, for 10 seconds
300(1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf`in (1.1N`m)
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25, L = 6.5mH RG = 25, IAS = 5.4A.
ISD 5.4A,di/dt280A/µs, VDDV(BR)DSS, TJ 175.
This is only applied to TO-220AB package.






Description

Fifth Generation HEXFET® Power MOSFETs IRF630NPbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package IRF630NPbF is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

The D2Pak IRF630NPbF is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRF630NPbF) is available for lowprofile application.






Parameters:

Technical/Catalog InformationIRF630NPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C9.3A
Rds On (Max) @ Id, Vgs300 mOhm @ 5.4A, 10V
Input Capacitance (Ciss) @ Vds 575pF @ 25V
Power - Max82W
PackagingTube
Gate Charge (Qg) @ Vgs35nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF630NPBF
IRF630NPBF



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