MFG:IR Package Cooled:TO-263 D/C:0636+
MFG: IR
Package Cooled: TO-263
D/C: 0636+
Description: Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced pr...
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF630NL) is available for lowprofile application.
| Parameter |
Max. |
Units | |
| ID @ TC = 25 | Continuous Drain Current,VGS @ 10V |
9.3 |
A |
| ID @ TC = 100 | Continuous Drain Current,VGS @ 10V |
6.5 | |
| IDM | Pulsed Drain Current |
37 | |
| PD @ TC = 25 | Power Dissipation |
82 |
W |
| Linear Derating Factor |
0.5 |
W/ | |
| VGS | Gate-to-Source Voltage |
±20 |
V |
| EAS | Single Pulse Avalanche Energy |
94 |
mJ |
| IAR | Avalanche Current |
9.3 |
A |
| EAR | Repetitive Avalanche Energy |
8.2 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt |
8.1 |
V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to 175 |
|
| Soldering Temperature, for 10 seconds |
300(1.6mm from case ) | ||
| Mounting torque, 6-32 or M3 srew | 10 lbf`in (1.1N`m) |
IRF034
PDF/DataSheet Download
Fifth Generation HEXFET® Power MOSFETs IRF630NS from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design...
Fifth Generation HEXFET® Power MOSFETs IRF630NPbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desi...
Fifth Generation HEXFET® Power MOSFETs IRF630NLPbFfrom International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desi...
Fifth Generation HEXFET® Power MOSFETs IRF630NL from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design...
Fifth Generation HEXFET® Power MOSFETs IRF630N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design ...
This power MOSFET IRF630MFPis designed using the company's consolidated strip layout-based MESH OVERLAY ™ process. This technology matches and improves the performances compared with standard parts from various sources.Isolated TO-220 option simplifies...
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