IRF630SPbF

The IRF630SPbF is designed as third generation HEXFET fro international recitifier which provide the designer with the best conbination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

It has eight features. (1)Surface mount. (2)Available in tape & reel. (3)Dynamic dv/dt rating. (4)Repetitive avalanche rated. (5)Fast switching. (6)Ease of paralleling. (7)Simple drive requirements. (8)It would be lead free. That are all the main features.

Some absolute maximum ratings have been concluded into several points as follow. (1)Its continuous drain current Vgs=10V would be 9.0A at 25°C and would be 5.7A at 100°C. (2)Its pulsed drain current would be 36A. (3)Its power dissipation would be 74W. (4)Its linear derating factor would be 0.59W/°C. (5)Its gate to source voltage would be +/-20V. (6)Its single pulse avalanche energy would e 250mJ. (7)Its repetitive avalanche energy would be 7.4mJ. (8)Its peak diode recovery dv/dt would be 5.0V/ns. (9)Its operating junction and storage temperature range would be from -55°C to +150°C. (10)Its soldering temperature for 10 seconds would be 300°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics are concluded as follow. (1)Its drain to source breakdown voltage would be min 200V. (2)Its breakdown voltage temperature coefficient would be typ 0.24V/°C. (3)Its static drain to source on resistance would be max 0.40 ohms. (4)Its gate threshold voltage would be min 2.0V and max 4.0V. (5)Its forward transconductance would be min 3.8S. (6)Its drain to source leakage current would be max 25uA at Vds=200V and would be max 250uA at Vds=160V and Tj=125°C. (7)Its gate to source forward leakage would be max 100nA at Vgs=20V. (8)Its gate to source reverse leakage would be max -100nA at Vgs=-20V. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!