MFG:F Package Cooled:TO-220 D/C:09+
MFG: F
Package Cooled: TO-220
D/C: 09+
Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprie...
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.
| Symbol | Parameter |
IRF634B |
IRFS634B |
Units |
| VDSS | Drain-Source Voltage |
250 |
V | |
| ID | Drain Current - Continuous (TC = 25 ) -Continuous (TC = 100 ) |
8.1 |
8.1* |
A |
|
5.1 |
5.1* |
A | ||
| IDM | Drain Current-Pulsed (Note 1) |
32.4 |
32.4* |
A |
| VGSS | Gate-Source Voltage |
±30 |
V | |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
200 |
mJ | |
| IAR | Avalanche Current (Note 1) |
8.1 |
A | |
| EAR | Repetitive Avalanche Energy (Note 1) |
7.4 |
mJ | |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns | |
| PD | Power Dissipation (TC=25 ) - Derate above 25°C |
74 |
38 |
W |
|
0.59 |
0.3 |
W/ | ||
| TJ,TSTG | Operating and Storage Temperature Range |
- 55 to +150 |
||
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
||
IRF634B
PDF/DataSheet Download
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