MFG:IR Package Cooled:D2-PAK D/C:09+
MFG: IR
Package Cooled: D2-PAK
D/C: 09+
Description: Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced pr...
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF634NL) is available for lowprofile application.
| Parameter |
Max. |
Units | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V |
8.0 |
A |
| ID @ TC = 100 | Continuous Drain Current, VGS @ 10V |
5.6 | |
| IDM | Pulsed Drain Current |
32 | |
| PD @TC = 25 | Power Dissipation |
88 |
|
| PD @TA = 25 | Power Dissipation |
3.8 |
W |
| Linear Derating Factor0 |
0.59 |
W/ | |
| VGS | Gate-to-Source Voltage |
± 20 |
V |
| EAS | Single Pulse Avalanche Energy |
110 |
mJ |
| IAR | Avalanche Current |
4.8 |
A |
| EAR | Repetitive Avalanche Energy |
8.8 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt |
7.3 |
V/ns |
| TJ,TSTG | Storage Temperature Range |
-55 to + 175 |
|
| Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) | ||
| Mounting torque, 6-32 or M3 screw |
10 lbf•in (1.1N•m) |
IRF634NS
PDF/DataSheet Download
Fifth Generation HEXFET® Power MOSFETs IRF634NPbFfrom International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig...
Fifth Generation HEXFET® Power MOSFETs IRF634NLfrom International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design ...
Fifth Generation HEXFET® Power MOSFETs IRF634N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design ...
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