Purchase IRF634, SiHF634, In-stock IRF634, SiHF634 From SeekIC.
- Table of contents:
IRF634, SiHF634
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Suppliers
DataSheet
General Description
IRF634, SiHF634 General Description
Power MOSFET
IRF034
PDF/DataSheet Download
- Datasheet: IRF034
- File Size: 147521 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
- ·IRF044
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 22513 KB
- ·IRF044SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 21905 KB
- ·IRF054
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 149688 KB
- ·IRF054SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 23141 KB
- ·IRF100
- ETC [ETC]
- 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
- 86902 KB
- ·IRF101
- FAIRCHILD [Fairchild Semiconductor]
- N-Channel Power MOSFETs, 27 A, 60-100V
- 149859 KB
- ·IRF1010E
- IRF [International Rectifier]
- Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A
- 200209 KB
- ·IRF1010EL
- IRF [International Rectifier]
- Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
- 126916 KB
IRF634, SiHF634 Relative Products
IRF634
Using the latest high voltage MESH OVERLAY™ process IRF634, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company's proprietary edge termination structur...
IRF630SPbF
The IRF630SPbF is designed as third generation HEXFET fro international recitifier which provide the designer with the best conbination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.IRF630SPbF has eight features. (1)Su...
IRF630S, SiHF630S
Power MOSFET IRF630S, SiHF630S
IRF630S
This power MOSFETof the IRF630S is designed using the company's consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.
IRF630NSTRRPBF
MOSFET N-CH 200V 9.3A D2PAK
-
IRF630NSTRLPBF
MOSFET N-CH 200V 9.3A D2PAK
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