MFG:IR Package Cooled:TO-220 D/C:538
MFG: IR
Package Cooled: TO-220
D/C: 538
Description: These N-Channel enhancement mode power field effecttransistors are produced using Fairchild's pr...
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.
| Symbol | Parameter | IRF640B | IRFS640B | Units |
| VDSS | Drain-Source Voltage | 200 | V | |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
18 * | A | |
| 11.4 * | A | |||
| IDM | Drain Current - Pulsed (Note 1) | 72 * | A | |
| VGSS | Gate-Source Voltage | ± 30 | V | |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 250 | mJ | |
| IAR | Avalanche Current (Note 1) | 18 | A | |
| EAR | Repetitive Avalanche Energy (Note 1) | 13.9 | mJ | |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns | |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
139 | 43 | W |
| 1.11 | 0.35 | W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | °C | |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | °C | |
IRF640B
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