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Part Number: IRF640FP

 

 

 

 

Description: This power MOSFET is designed using he company's consolidated strip layout-based MESH OVERLAY™ p...


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IRF640FP General Description


This power MOSFET is designed using he company's consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.

IRF640FP Maximum Ratings

Symbol Parameter
Value
Unit
IRF640
IRF640FP
VDS Drain-source Voltage (VGS = 0)
200
V
VDGR Drain- gate Voltage (RGS = 20 k)
200
V
VGS Gate-source Voltage
± 20
V
ID Drain Current (continuous) at Tc = 25
18
18(**)
A
ID Drain Current (continuous) at Tc = 100
11
11(**)
A
IDM(•) Drain Current (pulsed)
72
72
A
Ptot Total Dissipation at Tc = 25
125
40
W
  Derating Factor
1.0
0.32
W/oC
dv/dt(1) Peak Diode Recovery voltage slope
5
5
V/ns
VISO Peak Diode Recovery voltage slope
-
2000
V
Tstg Storage Temperature
-65 to 150
Tj Max. Operating Junction Temperature
150

(•) Pulse width limited by safe operating area     ( 1) ISD 18A, di/dt300 A/ms, VDDV(BR)DSS, Tj TJMAX
First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet
(**) Limited only by Maximum Temperature Allowed

IRF640FP Features

 ` TYPICAL RDS(on) = 0.150
 `  EXTREMELY HIGH dV/dt CAPABILITY
 `  VERY LOW INTRINSIC CAPACITANCES
 `  GATE CHARGE MINIMIZED

IRF640FP Typical Application

 ·  HIGH CURRENT SWITCHING
 ·  UNINTERRUPTIBLE POWER SUPPLY (UPS)
 ·  DC/DC COVERTERS FOR TELECOM,
      INDUSTRIAL, AND LIGHTING EQUIPMENT.

IRF640FP datasheet

IRF640FP
PDF/DataSheet Download

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