IRF640L

Series: -
Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25° C: 18A
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 70nC @ 10V
Input Capacitance (Ciss) @ Vds: 1300pF @ 25V
Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK
Power - Max: 130W


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	18	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	13
IDM	Pulsed Drain Current 	72
PD @TA = 25°C	Power Dissipation	3.1	W
PD @TC = 25°C	Power Dissipation	150	W
	Linear Derating Factor	1.0	W/°C
VGS	Gate-to-Source Voltage	± 20	V
EAS	Single Pulse Avalanche Energy‚	247	mJ
IAR	Avalanche Current	18	A
EAR	Repetitive Avalanche Energy	15	mJ
dv/dt	Peak Diode Recovery dv/dt †	8.1	V/ns
TJ	Operating Junction and	-55 to +175	°C
TSTG	Storage Temperature Range
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )

Description

Third  Generation  HEXFETs IRF640L from  International Rectifier  provide the designer with the best combinations of fast switching ,ruggedized device design, low on-resistance and cost-effectiveness.

The D2Pak IRF640L is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power  capability and  the lowest  possible on-resistance  in any existing surface  mount package. The D2Pak  is suitable for high current applications  because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount  application.The through-hole  version (IRF640L)  is available for low-profile applications.