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MFG:IR  Package Cooled:TO-220  D/C:2005  

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Part Number: IRF640N

 

MFG: IR

Package Cooled: TO-220

D/C: 2005

Description: Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing te...


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IRF640N General Description


Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

IRF640N Maximum Ratings

Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
18
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
13
IDM
Pulsed Drain Current 
72
PD @TC = 25°C
Power Dissipation
150
W
Linear Derating Factor
1.0
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy‚
247
mJ
IAR
Avalanche Current
18
A
EAR
Repetitive Avalanche Energy
15
mJ
dv/dt
Peak Diode Recovery dv/dt †
8.1
V/ns
TJ
Operating Junction and
-55 to +175
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew„
10 lbf•in (1.1N•m)

IRF640N datasheet

IRF640N
PDF/DataSheet Download

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