MFG:INTERNATIONALRECTIFIER Package Cooled:DIP/SOP D/C:08+
MFG: INTERNATIONALRECTIFIER
Package Cooled: DIP/SOP
D/C: 08+
Description: Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing te...
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF640NL) is available for low- profile application.
| Symbol | Parameter | Max. | Units |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 18 |
A |
| ID TC =100°C | Continuous Drain Current, VGS @ 10V | 13 | A |
| IDM | Pulsed Drain Current | 72 | A |
| PD @ TC = 25 | Maximum Power Dissipation | 150 | W |
| Linear Derating Factor |
1.0 |
W | |
| VGS | Gate-to-Source Voltage | ±2 | W/ |
| EAS | Single Pulse Avalanche Energy | 247 | mJ |
| IAR | Avalanche Current | 18 | A |
| EAR | Repetitive Avalanche Energy | 15 | mJ |
| dv/dt | Peak Diode Recovery | 8.1 | V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
| Soldering Temperature, for 10 seconds (1.6mm from case) |
300 | ||
| Mounting torque, 6-32 or M3 screw | 10lb in (1.1N m) |
IRF034
PDF/DataSheet Download
Fifth Generation HEXFET® Power MOSFETs IRF640NL from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design...
Fifth Generation HEXFET® Power MOSFETs IRF640Nfrom International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t...
Third Generation HEXFETs IRF640L from International Rectifier provide the designer with the best combinations of fast switching ,ruggedized device design, low on-resistance and cost-effectiveness.The D2Pak IRF640Lis a surface mount power package capable of a...
This power MOSFET of the IRF640FPis designed using he company's consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.
These N-Channel enhancement mode power field effecttransistors IRF640Bare produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology IRF640B has been especially tailored tominimize on-state resistance, provide superior switchingp...
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