MFG:International Rectifier Category:Discrete Semiconductor Products
Category: Discrete Semiconductor Products
MFG: International Rectifier
Descriptions: MOSFET N-CH 200V 18A D2PAK
800
1.75534
1404.27
| Technical/Catalog Information | IRF640NSTRL |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 18A |
| Rds On (Max) @ Id, Vgs | 150 mOhm @ 11A, 10V |
| Input Capacitance (Ciss) @ Vds | 1160pF @ 25V |
| Power - Max | 150W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 67nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRF640NSTRL IRF640NSTRL |
IRF034
PDF/DataSheet Download
Fifth Generation HEXFET® Power MOSFETs IRF640NSPbFfrom International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desi...
Fifth Generation HEXFET® Power MOSFETs IRF640NSfrom International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design ...
The IRF640NPbF is one of the IRF640N series.Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching...
Fifth Generation HEXFET® Power MOSFETs IRF640NLPbFfrom International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desi...
Fifth Generation HEXFET® Power MOSFETs IRF640NL from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design...
Fifth Generation HEXFET® Power MOSFETs IRF640Nfrom International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t...
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