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MFG:IR  

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Part Number: IRF640S

 

MFG: IR

 

 

Description: This power MOSFET is designed using he company's consolidated strip layout-based MESH OVERLAYTM <...


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IRF640S General Description


This power MOSFET is designed using he company's consolidated strip layout-based MESH OVERLAYTM process. This technology matches and improves the performances compared with standard parts from various sources.

IRF640S Maximum Ratings

Symbol
Parameter
Value
Uni t
VDS
Drain-source Voltage (VGS = 0)
200
V
VDGR
Drain- gate Voltage (RGS = 20 k)
200
V
VGS
Gate-source Voltage
± 20
V
ID
Drain Current (continuous) at Tc = 25 °C
18
A
ID
Drain Current (continuous) at Tc = 100 °C
11
A
IDM(`)
Drain Current (pulsed)
72
A
Ptot
Total Dissipation at Tc = 25 oC
125
W
Derating Factor
1.0
W/°C
dv/dt(1)
Peak Diode Recovery voltage slope
5
V/ns
Tstg
Storage Temperature
-65 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C


(•) Pulse width limited by safe operating area             ( 1) ISD 18A, di/dt 300 A/ms, VDD V(BR)DSS, Tj TJMAX

IRF640S Features

` TYPICAL RDS(on) = 0.150
` EXTREMELY HIGH dv/dt CAPABILITY
` VERY LOW INTRINSIC CAPACITANCES
` GATE CHARGE MINIMIZED

IRF640S Typical Application

· HIGH CURRENT SWITCHING
· UNINTERRUPTIBLE POWER SUPPLY (UPS)
· DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.

IRF640S datasheet

IRF640S
PDF/DataSheet Download

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