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MFG:IR


Part Number: IRF640S
MFG: IR
Description: This power MOSFET is designed using he company's consolidated strip layout-based MESH OVERLAYTM <...
MFG:IR


MFG: IR
Description: This power MOSFET is designed using he company's consolidated strip layout-based MESH OVERLAYTM <...
This power MOSFET is designed using he company's consolidated strip layout-based MESH OVERLAYTM process. This technology matches and improves the performances compared with standard parts from various sources.
|
Symbol |
Parameter |
Value |
Uni t |
|
VDS |
Drain-source Voltage (VGS = 0) |
200 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
200 |
V |
|
VGS |
Gate-source Voltage |
± 20 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 °C |
18 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 °C |
11 |
A |
|
IDM(`) |
Drain Current (pulsed) |
72 |
A |
|
Ptot |
Total Dissipation at Tc = 25 oC |
125 |
W |
| Derating Factor |
1.0 |
W/°C | |
|
dv/dt(1) |
Peak Diode Recovery voltage slope |
5 |
V/ns |
|
Tstg |
Storage Temperature |
-65 to 150 |
°C |
|
Tj |
Max. Operating Junction Temperature |
150 |
°C |
(•) Pulse width limited by safe operating area ( 1) ISD 18A, di/dt 300 A/ms, VDD V(BR)DSS, Tj TJMAX
· HIGH CURRENT SWITCHING
· UNINTERRUPTIBLE POWER SUPPLY (UPS)
· DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.
IRF640S
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